P‐221: Enhancement of Electroluminescent Property of Inverted Top‐Emitting Organic Light Emitting Diodes with Transparent AgO x  by O 2  Plasma | Zendy

Hong Kihyon | Zendy; Kim Kisoo | Zendy; Lee JongLam | Zendy

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P‐221: Enhancement of Electroluminescent Property of Inverted Top‐Emitting Organic Light Emitting Diodes with Transparent AgO x by O 2 Plasma

Author(s) -

Hong Kihyon,

Kim Kisoo,

Lee JongLam

Publication year - 2008

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3069602

Subject(s) - electroluminescence , anode , luminance , optoelectronics , materials science , diode , oled , plasma , light emitting diode , optics , electrode , nanotechnology , chemistry , physics , layer (electronics) , quantum mechanics

We demonstrate a transparent AgO x top anode by formed by O 2 plasma treatment for inverted top‐emitting organic light emitting diodes (ITOLEDs). The turn‐on voltage decreased from 22 to 12 V, and the luminance increased from 175 to 630 cd/m 2 by using this transparent AgO x anode. The AgO x lowered the injection barrier for holes, enhancing the electroluminescent properties of ITOLEDs.

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