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P‐215: Improved Carrier Transport into Wide‐Bandgap Host for Low‐Voltage High‐Efficiency Blue PHOLEDs
Author(s) -
Lee MengTing,
Lin JinSheng,
Chu MiaoTsai,
Tseng MeiRurng
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069597
Subject(s) - optoelectronics , dopant , materials science , common emitter , quantum efficiency , doping , band gap , diode , brightness , oled , electrical efficiency , nanotechnology , power (physics) , optics , physics , layer (electronics) , quantum mechanics
Low‐voltage, high‐efficiency blue phosphorescent organic light‐emitting diodes (PHOLEDs) based on a new composition of emitter, including a wide bandgap host, a carrier‐transporting material and an organometallic iridium dopant, have been demonstrated. The device exhibits an external quantum efficiency (EQE) of 12%, a power efficiency of 17 lm/W and a low voltage of 4.8 V at a practical brightness of 1000 cd/m 2 with a CIE x,y of (0.16, 0.35), which was twofold higher than that of used typical emitter composed host and dopant only. The dramatic enhancement can attributed to the transport of carrier into the wide bandgap host which can be facilitated through doping a carrier‐transporting material in emitter for increasing carrier recombination.