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3.1: Distinguished Paper : 12.1‐Inch WXGA AMOLED Display Driven by Indium‐Gallium‐Zinc Oxide TFTs Array
Author(s) -
Jeong Jae Kyeong,
Jeong Jong Han,
Choi Jong Hyun,
Im Jang Soon,
Kim Sung Ho,
Yang Hui Won,
Kang Ki Nyeng,
Kim Kwang Suk,
Ahn Tae Kyung,
Chung HyunJoong,
Kim Minkyu,
Gu Bon Seog,
Park JinSeong,
Mo YeonGon,
Kim Hye Dong,
Chung Ho Kyoon
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069591
Subject(s) - amoled , thin film transistor , materials science , optoelectronics , active matrix , oled , threshold voltage , transistor , diode , substrate (aquarium) , voltage , electrical engineering , nanotechnology , layer (electronics) , engineering , oceanography , geology
The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix back plane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor. The n‐channel a‐IGZO TFTs exhibited the field‐effect mobility of 8.2 cm 2 /Vs, threshold voltage of 1.1 V, on/off ratio of > 10 8 , and subthreshold gate swing of 0.58 V/decade. The AMOLED display with a‐IGZO TFT array would be promising for large size applications such as note PC and HDTV because a‐IGZO semiconductor can be deposited on large glass substrate (> Gen. 7) using conventional sputtering system.