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P‐209: New Green Phosphorescent Host Materials
Author(s) -
Jeon Woo Sik,
Park Tae Jin,
Park Jung Joo,
Kim Sun Young,
Pode Ramchandra,
Jang Jin,
Kwon Jang Hyuk
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069589
Subject(s) - phosphorescence , dopant , oled , electrical efficiency , diode , luminance , materials science , optoelectronics , host (biology) , green light , power (physics) , doping , nanotechnology , optics , physics , blue light , fluorescence , ecology , layer (electronics) , quantum mechanics , biology
We report novel bipolar host materials for high efficiency green phosphorescent organic light emitting diode devices (PHOLEDs). Phenyl moieties were inserted in a 4,4′‐N,N′‐dicarbazolebipheyl (CBP) structure to reduce electron injection barrier and enhance electron mobility. The significant improvement of current and power efficiencies and reduction in turn‐on voltage in green light‐emitting PHOLEDs by this modification are observed. At a given constant luminance of 1000 cd/m 2 , current efficiency 53 cd/A, low driving voltage 6.5 V, and power efficiency 27 lm/W in 4,4′‐N,N′‐dicarbazoleterpheyl (CTP) host with Ir(ppy)3 dopant are reported. Results show better performance in green PHOLEDs with new host materials than CBP.