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P‐157: Effect of the Sputtering Condition on the LC Alignment Properties of SiO 2 Layer
Author(s) -
Sung ShiJoon,
Yang KeeJeong,
Kim DaeHwan,
Do Yun Seon,
Choi ByeongDae
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069526
Subject(s) - sputtering , layer (electronics) , materials science , analytical chemistry (journal) , thin film , optoelectronics , composite material , chemistry , chromatography , nanotechnology
The relationship between the sputtering condition and the LC alignment properties of SiO 2 layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO 2 layers, which might be closely related with the thin layer formation process.
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