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P‐155: Enhanced Electron Emission with Robust CNTs Grown by Resist‐Assisted Patterning Process
Author(s) -
Ryu Je Hwang,
Lee Chang Seok,
Kim Ki Seo,
Lim Han Eol,
Min Kyung Woo,
Jeong Il Ok,
Manivannan S.,
Jang Jin,
Park Kyu Chang
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069523
Subject(s) - resist , materials science , field electron emission , carbon nanotube , electrode , chemical vapor deposition , nanotechnology , substrate (aquarium) , plasma enhanced chemical vapor deposition , optoelectronics , electron , plasma , common emitter , chemistry , physics , oceanography , layer (electronics) , quantum mechanics , geology
We developed a novel carbon nanotube field emitter arrays (CNT‐FEAs) with resist‐assisted patterning process by dc‐plasma enhanced chemical vapor deposition (PECVD). Through this method, we obtained a very strong bonded CNT with substrate. The CNTs were grown with −600 V bias to substrate electrode and +300 V bias to mesh grid being placed 10mm above the substrate holder electrode. The structure and electrical properties of the CNTs were strongly related to the growth time. The length was decreased after 80 minute and the diameter increases with growth time. An electron emission current increases with growth time. The growth mechanism, electron emission characteristics, and mechanical robustness were discussed.