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P‐127: A ZnO Based Heterostructured n‐i‐n Light‐Emitting Diode by Low‐Cost Ultrasonic Spray Pyrolysis
Author(s) -
Sun Xiao Wei,
Zhao Junliang,
Tan Swee Tiam,
Lo G. Q.,
Kwong D. L.
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069490
Subject(s) - materials science , electroluminescence , optoelectronics , schottky diode , acceptor , diode , light emitting diode , spray pyrolysis , layer (electronics) , biasing , doping , substrate (aquarium) , voltage , nanotechnology , electrical engineering , oceanography , physics , engineering , condensed matter physics , geology
A n‐Zn1−xMgxO/i‐ZnO/SiOx/n+‐Si heterostructured light‐emitting diode has been demonstrated by low‐cost ultrasonic spray pyrolysis. The current‐voltage measurement shows typical characteristics of a back‐to‐back diode, due to the double Schottky barriers induced by the SiOx layer. Blue electroluminescence peaking at 460 nm was observed at room temperature when a positive bias of ∼4V was applied on the Si substrate. The electroluminescence is suggested to be dominated by the donor‐acceptor pair recombination in the i‐ZnO layer, where the holes were injected from the valence band of Si into the acceptor level of i‐ZnO.