Premium
P‐79: Characterization of Narrow‐Channel TFT Using Asymmetric Halftone Exposure
Author(s) -
Chun KiChul,
Woo Juhyun,
Jung Deuksoo,
Park Mungi,
Kim Hwan,
Lim ByoungHo,
Yu SangJeon
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069435
Subject(s) - thin film transistor , channel (broadcasting) , materials science , halftone , amorphous silicon , optoelectronics , characterization (materials science) , oxide thin film transistor , transistor , silicon , amorphous solid , optics , computer science , nanotechnology , electrical engineering , telecommunications , physics , crystalline silicon , layer (electronics) , chemistry , crystallography , engineering , pixel , voltage
Asymmetric slits were designed to make channel length (L) of thin film transistor (TFT) narrower. Amorphous silicon TFTs, having various channel lengths in the range of 1.5μm to 4μm, were successfully fabricated by optimizing two different slit widths beyond its own resolution limitation of a exposure system. Also, characteristics of TFTs having channel length below 4μm were investigated in this paper.