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P‐67: Wet Etching of Gallium Indium Zinc Oxide (GIZO) Semiconductor for Thin Film Transistor Application
Author(s) -
Seo Jong Hyun,
Lee SangHyuk,
Seo BoHyun,
Jeon JaeHong,
Choe HeeHwan,
Lee KangWoong
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069421
Subject(s) - thin film transistor , materials science , etching (microfabrication) , gallium , indium , thin film , layer (electronics) , semiconductor , optoelectronics , oxide thin film transistor , amorphous solid , zinc , transistor , nanotechnology , metallurgy , electrical engineering , chemistry , crystallography , engineering , voltage
Recently, a significant progress has been made in the characterization of gallium indium zinc oxide (GIZO) as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor. However, the wet behavior of GIZO thin film in the etching solutions which is conventionally used in TFT industry has not been reported yet. In this work, wet etch behavior of RF magnetron sputtered GIZO thin film in a new wet etchant was studied.