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P‐64: Optimum Slit Design Simulation Applied by the Gray‐Tone Photolithography
Author(s) -
Choi SeungJin,
Kim KiYong,
Jing Lv,
Yong Y. S.,
You J. G.,
Lee J. Y.
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069418
Subject(s) - slit , photolithography , ripple , diagonal , optics , tone (literature) , transmittance , materials science , computer science , physics , engineering , mathematics , geometry , electrical engineering , voltage , art , literature
Optimum slit design applied by the gray‐tone photolithography with protrusion and diagonal has been established by simulation and experiments. The adoption of protrusion and diagonal are able to defend loss of active layer and curve of Source/Drain. The stable and uniform gray‐tone process was accomplished by slit mask which had optimum diagonal slit design without ripple of transmittance in same TFT. Moreover we found that channel bias was changed by ripple in same transmittance. OPTOLITH simulation was able to assume gray‐tone pattern and seek optimum slit design but it was necessary to confirm by experiment. In this research, we have organized slit design guide applied by the gray‐tone photolithography through simulation and experiments.