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P‐62: Organic Surface of a TFT Array Treated with Nitrogen Plasma
Author(s) -
Liao HsinMing,
Huang TeChun,
Huang GuoYou,
Chen MaoSong,
Huang WeiMing
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069416
Subject(s) - thin film transistor , materials science , indium tin oxide , nitrogen , layer (electronics) , amorphous solid , plasma , chemical engineering , analytical chemistry (journal) , nanotechnology , organic chemistry , chemistry , physics , quantum mechanics , engineering
The photosensitive organic material for the hydrogenated amorphous‐Si (a‐Si) and low temperature Poly‐Si (LTPS) thin film transistors (TFTs) has been widely applied. Through the low dielectric organic layer, higher aperture ratio and higher LCD panel performance can be achieved. This study focus on the surface of organic material that treated by nitrogen plasma found the interface between the organic layer and Indium Tin Oxide (ITO) film wherein nitrogen‐containing compounds produced by the nitrogen plasma treatment. On the organic surface of TFT array, better adhesion with nitrogen plasma treatment than without treated may be attributed to C‐N‐In or C‐N‐Sn bond formation between the interface of nitrogenated polymer surface and ITO sputter layer.