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12.2: Solution Processable Passivation Layer for Active Matrix Thin Film Transistors on Rigid and Flexible Substrates
Author(s) -
Krishnamoorthy Ahila,
Spear Richard,
Gebrebrhan Amanuel,
Stifanos Mehari,
Bien Hai,
Lowe Marie,
Yellowaga Deborah,
Smith Peter,
O'Rourke Shawn,
Loy Doug,
Dailey Jeff,
Marrs Michael,
Ageno Scott
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069412
Subject(s) - passivation , materials science , active matrix , thin film transistor , layer (electronics) , transistor , siloxane , dielectric , active layer , matrix (chemical analysis) , optoelectronics , polymer , composite material , electrical engineering , engineering , voltage
Organosiloxane based spin on planarizing dielectrics (PTS‐E and PTS‐R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we demonstrate the successful use of siloxane‐based material as a passivation layer for active matrix α‐Si thin film transistors (TFT) on both rigid and flexible substrates.

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