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P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States
Author(s) -
Hsieh HsingHung,
Kamiya Toshio,
Nomura Kenji,
Hosono Hideo,
Wu ChungChih
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069372
Subject(s) - thin film transistor , amorphous silicon , amorphous solid , materials science , amorphous semiconductors , density of states , subthreshold conduction , semiconductor , condensed matter physics , optoelectronics , transistor , oxide thin film transistor , subthreshold slope , oxide , silicon , nanotechnology , electrical engineering , mosfet , crystalline silicon , crystallography , chemistry , physics , engineering , metallurgy , layer (electronics) , voltage
We report a model of the carrier transport and the subgap density of states in a representative amorphous oxide semiconductor, amorphous InGaZnO 4 (a‐IGZO), for device simulation of a‐IGZO TFTs. Compared to hydrogenated amorphous silicon, a‐IGZO exhibits much lower densities of tail states and deep gap states, leading to the small subthreshold swings and high mobilities.