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P‐25: Nanocrystalline Silicon Thin Film Transistor Fabricated without any Substrate Heating for a Flexible Display
Author(s) -
Kim SunJae,
Han SangMyeon,
Kuk SeungHee,
Kang DongWon,
Ha TaeJun,
Han MinKoo
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069368
Subject(s) - materials science , thin film transistor , amorphous solid , substrate (aquarium) , optoelectronics , annealing (glass) , silicon , layer (electronics) , nanocrystalline material , amorphous silicon , nanocrystalline silicon , oxide thin film transistor , nanotechnology , composite material , crystallography , crystalline silicon , chemistry , oceanography , geology
We have fabricated nc‐Si film and SiO 2 film without substrate heating using ICP‐CVD. nc‐Si film has amorphous incubation layer of 12nm and crystalline volume fraction of 27%. Hydrogen plasma post‐treatment was performed SiO 2 film and electrical characteristic of SiO 2 film was improved due to reduction of charges and annealing effect. And we have fabricated nc‐Si TFT without substrate heating using ICP‐CVD. Although there was no external heating, mobility of 6.42cm 2 /V⋅s was obtained. This result indicates that nc‐Si TFT fabricated without any substrate heating may be suitable device for a flexible display.