Premium
P‐24: Fabrication of Solution Processed InGaZnO Thin Film Transistor for Active Matrix Backplane
Author(s) -
Kim Gun Hee,
Shin Hyun Soo,
Kim Kyung Ho,
Park Won Jun,
Choi Yoon Jung,
Ahn Byung,
Kim Hyun Jae
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069366
Subject(s) - thin film transistor , backplane , fabrication , materials science , spin coating , active matrix , crystallite , transistor , optoelectronics , thin film , nanotechnology , electrical engineering , layer (electronics) , metallurgy , voltage , engineering , medicine , alternative medicine , pathology
We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on‐to‐off current ratio of ∼1.88×10 5 and field effect mobility of ∼0.96 cm 2 /Vs, respectively.