P‐24: Fabrication of Solution Processed InGaZnO Thin Film Transistor for Active Matrix Backplane | Zendy

Kim Gun Hee | Zendy; Shin Hyun Soo | Zendy; Kim Kyung Ho | Zendy; Park Won Jun | Zendy; Choi Yoon Jung | Zendy; Ahn Byung | Zendy; Kim Hyun Jae | Zendy

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P‐24: Fabrication of Solution Processed InGaZnO Thin Film Transistor for Active Matrix Backplane

Author(s) -

Kim Gun Hee,

Shin Hyun Soo,

Kim Kyung Ho,

Park Won Jun,

Choi Yoon Jung,

Ahn Byung,

Kim Hyun Jae

Publication year - 2008

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3069366

Subject(s) - thin film transistor , backplane , fabrication , materials science , spin coating , active matrix , crystallite , transistor , optoelectronics , thin film , nanotechnology , electrical engineering , layer (electronics) , metallurgy , voltage , engineering , medicine , alternative medicine , pathology

We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on‐to‐off current ratio of ∼1.88×10 5 and field effect mobility of ∼0.96 cm 2 /Vs, respectively.

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