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P‐23: Transparent Amorphous Oxide Thin Film Transistors Fabricated by Solution Coating Process
Author(s) -
Seo SeokJun,
Choi Chaun Gi,
Hwang Young Hwan,
Bae ByeongSoo
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069365
Subject(s) - thin film transistor , materials science , solution process , amorphous solid , layer (electronics) , oxide , indium tin oxide , optoelectronics , zinc , transistor , oxide thin film transistor , coating , thin film , nanotechnology , metallurgy , electrical engineering , chemistry , crystallography , engineering , voltage
Transparent thin film transistors (TTFTs) with zinc tin oxide (ZTO) and indium zinc oxide (IZO) channel layer by a simple and low‐cost solution process were demonstrated. The fabricated TTFTs exhibited reasonable transfer characteristics with mobilities of >cm 2 /V⋅s.