P‐23: Transparent Amorphous Oxide Thin Film Transistors Fabricated by Solution Coating Process | Zendy

Seo SeokJun | Zendy; Choi Chaun Gi | Zendy; Hwang Young Hwan | Zendy; Bae ByeongSoo | Zendy

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P‐23: Transparent Amorphous Oxide Thin Film Transistors Fabricated by Solution Coating Process

Author(s) -

Seo SeokJun,

Choi Chaun Gi,

Hwang Young Hwan,

Bae ByeongSoo

Publication year - 2008

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3069365

Subject(s) - thin film transistor , materials science , solution process , amorphous solid , layer (electronics) , oxide , indium tin oxide , optoelectronics , zinc , transistor , oxide thin film transistor , coating , thin film , nanotechnology , metallurgy , electrical engineering , chemistry , crystallography , engineering , voltage

Transparent thin film transistors (TTFTs) with zinc tin oxide (ZTO) and indium zinc oxide (IZO) channel layer by a simple and low‐cost solution process were demonstrated. The fabricated TTFTs exhibited reasonable transfer characteristics with mobilities of >cm 2 /V⋅s.

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