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P‐16: Distinguished Student Paper : Noble a‐Si:H Gate Driver with High Stability
Author(s) -
Choi Jae Won,
Kwon Min Sung,
Koo Ja Hun,
Park Jong Hyuk,
Kim Se Hwan,
Oh Dong Hae,
Lee SeungWoo,
Jang Jin
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069358
Subject(s) - thin film transistor , materials science , reliability (semiconductor) , transistor , optoelectronics , capacitor , gate driver , amorphous silicon , amorphous solid , threshold voltage , silicon , electrical engineering , voltage , nanotechnology , engineering , chemistry , physics , power (physics) , crystallography , crystalline silicon , layer (electronics) , quantum mechanics
We developed a stable, hydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) gate driver, composed of 10 TFTs and 1 capacitor. The pull‐down transistors are operated under AC bias to reduce the threshold voltage shift (V th shift). In our previous simulation results indicate that its lifetime can be as long as 50,000 hrs by AC operation of pull‐down transistors. In this work we have studied the reliability of the gate driver manufactured. We confirmed that our gate driver is very stable, so that the expected lifetime is longer than 50000 hrs.