P‐11: Amorphous In 2 O 3 ‐Ga 2 O 3 ‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates | Zendy

Hsieh HsingHung | Zendy; Wu ChengHan | Zendy; Wu ChungChih | Zendy; Yeh YungHui | Zendy; Tyan HorngLong | Zendy; Leu ChyiMing | Zendy

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P‐11: Amorphous In 2 O 3 ‐Ga 2 O 3 ‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates

Author(s) -

Hsieh HsingHung,

Wu ChengHan,

Wu ChungChih,

Yeh YungHui,

Tyan HorngLong,

Leu ChyiMing

Publication year - 2008

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.3069352

Subject(s) - polyimide , thin film transistor , materials science , amorphous solid , fabrication , optoelectronics , electronic circuit , transistor , nanotechnology , electrical engineering , layer (electronics) , crystallography , chemistry , voltage , engineering , medicine , alternative medicine , pathology

A process was developed for fine fabrication of amorphous IGZO TFTs and integrated circuits on flexible and colorless polyimide substrates. TFTs with field‐effect mobilities of ∼10 cm 2 /Vs and ring oscillators with propagation delay of 0.35 μs per stage were achieved on the polyimide substrates.

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