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P‐11: Amorphous In 2 O 3 ‐Ga 2 O 3 ‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates
Author(s) -
Hsieh HsingHung,
Wu ChengHan,
Wu ChungChih,
Yeh YungHui,
Tyan HorngLong,
Leu ChyiMing
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069352
Subject(s) - polyimide , thin film transistor , materials science , amorphous solid , fabrication , optoelectronics , electronic circuit , transistor , nanotechnology , electrical engineering , layer (electronics) , crystallography , chemistry , voltage , engineering , medicine , alternative medicine , pathology
A process was developed for fine fabrication of amorphous IGZO TFTs and integrated circuits on flexible and colorless polyimide substrates. TFTs with field‐effect mobilities of ∼10 cm 2 /Vs and ring oscillators with propagation delay of 0.35 μs per stage were achieved on the polyimide substrates.