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69.2: New R2PAT Printing Method for Fabricating TFT Electrodes
Author(s) -
Tanaka Masanobu,
Ishihara Hirotsugu,
Shimamura Toshiki,
Machida Akio,
Kamei Takahiro,
Ogawa Masataka
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069316
Subject(s) - thin film transistor , fabrication , electrode , materials science , inkwell , optoelectronics , residual , nanotechnology , computer science , composite material , layer (electronics) , chemistry , algorithm , medicine , alternative medicine , pathology
We have developed a low contact pressure Residual ink Removed Pattern Transfer (R2PAT) printing method which allows fully additive, vacuum‐free TFT electrode fabrication. A 900nm resolution and ±1um alignment accuracy has been achieved. A TFT fabricated using this method had demonstrated 33.9 cm 2 /Vs mobility and a 10 8 I on /I off ratio.