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Temperature instability of low‐temperature deposited a‐Si:H TFTs fabricated on plastic substrate
Author(s) -
Ho K. Y.,
Cheng C. H.,
Cheng C. C.,
Chen P. C.,
Yeh Y. H.
Publication year - 2008
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2938870
Subject(s) - materials science , backplane , substrate (aquarium) , stress (linguistics) , optoelectronics , polyimide , threshold voltage , thin film transistor , degradation (telecommunications) , thermal , composite material , voltage , electrical engineering , transistor , layer (electronics) , thermodynamics , oceanography , physics , geology , philosophy , linguistics , engineering
— Low‐temperature deposited a‐Si:H TFTs have been successfully fabricated on colorless polyimide (CPI) substrate for flexible‐display applications. A serious degradation in threshold voltage was observed after applying external thermal stress. The threshold‐voltage shift saturates after applying several thermal stress cycles. In addition, the TFTs show instability under long periods of thermal stress with fixed temperature. This phenomenon was composed of thermally induced traps and substrate‐expansion‐induced mechanical stress. Finally, the a‐Si:H TFT backplane fabricated on a PI substrate at low temperature has been successfully demonstrated for flexible AMLCDs.