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ZnO nanowires for LED and field‐emission displays
Author(s) -
Könenkamp R.,
Nadarajah A.,
Word R. C.,
Meiss J.,
Engelhardt R.
Publication year - 2008
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2918081
Subject(s) - electroluminescence , materials science , field electron emission , nanowire , optoelectronics , doping , ultraviolet , electroluminescent display , field emission display , deposition (geology) , light emission , nanostructure , homogeneous , nanotechnology , paleontology , physics , thermodynamics , layer (electronics) , quantum mechanics , sediment , biology , electron
— The use of ZnO nanostructures in various display applications is reported. Single‐crystalline vertically oriented nanowires with typical diameters of 100 nm and a length of 1–2 μm were grown at deposition temperatures below 100°C. Homogeneous growth over areas up to 50 cm 2 on Si as well as on various metallic, transparent, and flexible substrates were obtained. Visible electroluminescence in the region between 400 and 900 nm and narrow‐line near‐ultraviolet (UV) electroluminescence is demonstrated. The physical conditions leading to single‐crystalline growth at low temperature, the role of defects, and the possibility of doping are discussed. These issues present the main challenges on the road towards high emission rates in LED operation. Under certain conditions, sharply tipped wires can be grown that hold promise for field‐emission applications.