Investigation of distributed Bragg reflector growth conditions for high‐brightness AlGaInP light‐emitting diodes

— The effect of growth conditions of a distributed Bragg reflector (DBR) structure on the performance of AlGaInP light‐emitting diodes (LEDs) have been investigated. Increasing the growth temperature and the flow rate of AsH 3 as well as lowering the growth pressure resulted in improved reflectivity and root‐mean‐square (RMS) roughness of the high‐aluminum‐content multiple pairs of the DBR structure. An increase in the growth temperature may improve the mobility of atoms on the surface for the positioning of the right atomic site and to reduce oxygen incorporation. An increase in the flow rate of AsH 3 can suppress the arsenic vacancy formation at higher V/III ratios. Furthermore, reduction in growth pressure can suppress the convection flow on the epitaxial growth surface. To verify the influence of DBR growth conditions on the successive growth of LED structures, the growth of full LED structures having two different DBR growth conditions was performed, and AlGaInP red LEDs using full LED structures were fabricated. It was found that higher growth temperature and AsH 3 flow rate with lower growth pressure for the DBR structure produced improved output power of the AlGaInP LEDs, which can be attributed to the high reflectivity and low RMS roughness of the DBR structure.