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An averaging pixel structure using microcrystalline‐silicon films prepared at high temperature for AMOLED displays
Author(s) -
Gaillard Arc'hanmael,
Rogel Régis,
Crand Samuel,
MohammedBrahim Tayeb,
Roy Philippe,
Prat Christophe
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2825104
Subject(s) - amoled , materials science , oled , active matrix , pixel , optoelectronics , thin film transistor , brightness , backplane , diode , electronic circuit , layer (electronics) , computer science , optics , electrical engineering , nanotechnology , computer hardware , artificial intelligence , physics , engineering
— A new voltage‐addressed pixel using a multiple drive distribution has been developed to improve, in a simple way, the brightness uniformity of active‐matrix organic light‐emitting‐diode (AMOLED) displays. Moreover, circuits were realized using microcrystalline‐silicon (μc‐Si) films prepared at 600°C using a standard low‐pressure CVD system. The developed p ‐channel TFTs exhibit a field‐effect mobility close to 6 cm 2 /V‐sec. The experimental results show that the proposed spatial distribution of driving TFTs improves the uniformity of current levels, in contrast to the conventional two‐TFT pixel structure. Backplane performances have been compared using circuits based on μc‐Si and furnace‐annealed polysilicon materials. Finally, this technology has been used to make an AMOLED demonstration unit using a top‐emission OLED structure. Thus, by combining both an μc‐Si active‐layer and a current‐averaging driver, an unsophisticated solution is provided to solve the inter‐pixel non‐uniformity issue.