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Comparison of some characteristics of thin‐film‐electroluminescent ZnS: Er, F planar and edge emitters
Author(s) -
Vlasenko Nataliya A.,
Oleksenko Pavel F.,
Veligura Ludmila I.,
Mukhlyo Miroslav O.,
Denisova Zinaida L.,
Zinchenko Viktor F.
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2812995
Subject(s) - common emitter , electroluminescence , materials science , enhanced data rates for gsm evolution , planar , optoelectronics , thin film , voltage , optics , physics , nanotechnology , telecommunications , computer graphics (images) , layer (electronics) , quantum mechanics , computer science
— The following main differences have been revealed in the characteristics of an edge thin‐film‐electroluminescent ZnS: Er,F emitter compared to those of a similar planar emitter: (1) the 1.535‐μm band more highly dominates over other bands in the EL spectrum; (2) the voltage (V) dependence of the intensity of this band is the strongest; (3) the 1.535‐μm band narrows with increasing voltage and its frequency. The above differences are explained, firstly, by smaller optical losses in the ZnS: Er,F film for the near‐infrared emission than for the visible one and, secondly, by an optical amplification over the 1.535‐μm band in the edge emitter.