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Active‐matrix OLED backplanes based on LTPS for small molecules and polymers
Author(s) -
Persidis Efstathios,
Baur Holger,
Hergert Steffen,
Hlawatsch René,
Pieralisi Fabio,
Schalberger Patrick,
Fruehauf Norbert
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2812993
Subject(s) - backplane , materials science , active matrix , thin film transistor , optoelectronics , plasma enhanced chemical vapor deposition , amorphous silicon , oled , oxide thin film transistor , polymer , amorphous solid , silicon , dielectric , nanotechnology , crystalline silicon , computer science , composite material , chemistry , layer (electronics) , computer hardware , organic chemistry
— A four‐mask low‐temperature poly‐Si (LTPS) TFT process for p ‐ and n ‐channel devices has been developed. PECVD‐deposited amorphous silicon was recrystallized to polycrystalline‐silicon with single‐area excimer‐laser crystallization, while the gate dielectric was fabricated by PECVD deposition of a SiH 4 ‐N 2 O‐based silicon oxide. Formation of drain and source was carried out with self‐aligned ion‐beam implantation. To prove the potential capability of these devices, which are suitable for conventional and inverted OLEDs alike, several functional active‐matrix backplanes implementing different pixel circuits have been produced. This active‐matrix backplane process has been customized to drive small molecules as well as polymers regardless if its structure is top or bottom emitting.