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69.2: High Efficiency Red‐Emission Phosphorescent Polymer Lighting Emitting Diodes Based on Ir(piq)3 Derivatives
Author(s) -
Huang Jinsong,
Yang Yang,
Watanabe Taiki,
Ueno Kazunori
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785694
Subject(s) - phosphorescence , polyfluorene , cathode , materials science , diode , optoelectronics , oled , dopant , layer (electronics) , polymer , light emitting diode , electron , electroluminescence , doping , chemistry , nanotechnology , optics , fluorescence , composite material , physics , quantum mechanics
In this paper, several kinds Ir(piq) 3 derivatives are used as dopants in polyfluorene to fabricate high performance pure red emission phosphorescent polymer light‐emitting‐diodes. Electron injection/hole blocking layer Cs 2 CO 3 is inserted between light emitting polymer layer and Al cathode. By modulating the electron injection ability from cathode using Cs 2 CO 3 nano‐thick layer, electron current can be controlled precisely to balance hole current. Peak efficiencies of 16.9 cd/A and 17.6 lm/W at 220cd/m 2 is achieved.