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52.3: 2.2 Inch qqVGA AMOLED Driven by Si TFT with Active Layer Deposited at Room Temperature
Author(s) -
Jung Ji Sim,
Park Kyung Bae,
Ryu Myung Kwan,
Lee Sang Yoon,
Kim Jong Min,
Kwon Jang Yeon
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785621
Subject(s) - amoled , thin film transistor , backplane , materials science , active matrix , active layer , optoelectronics , threshold voltage , layer (electronics) , capacitance , transistor , voltage , electrical engineering , nanotechnology , electrode , chemistry , engineering
Abstract We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. Our R.T. Si TFT showed a field‐effect mobility of 0.07cm 2 /Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on‐off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.