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46.1: Invited Paper : Integrated a‐Si:H TFT Gate Driver Circuits on Large Area TFT‐LCDs
Author(s) -
Moon SeungHwan,
Lee YongSoon,
Lee MinCheol,
Berkeley Brian H.,
Kim NamDeog,
Kim SangSoo
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785595
Subject(s) - thin film transistor , gate driver , node (physics) , electronic circuit , reliability (semiconductor) , electrical engineering , computer science , materials science , engineering , physics , nanotechnology , voltage , power (physics) , structural engineering , layer (electronics) , quantum mechanics
Integrated a‐Si:H TFT gate driver circuits on large area TFT‐LCDs are reviewed. A novel AC‐biased holding circuit to stabilize the floating node of the shift register on the gate drivers is proposed to improve the driver reliability. Experimental confirmation validates that the new a‐Si:H TFT gate drivers are highly reliable