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42.2: Efficient Field Emission from ZnO by Morphological and Electronic Design
Author(s) -
Sun Xiaowei W.,
Xu Chunxiang,
Wei Ang,
Li Chen,
Lei Wei,
Zhang Xiaobing,
Wang Baoping
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785579
Subject(s) - field electron emission , common emitter , materials science , annealing (glass) , fabrication , optoelectronics , doping , fermi level , current density , conductivity , nanotechnology , metallurgy , chemistry , electron , medicine , physics , alternative medicine , pathology , quantum mechanics
Abstract Efficient field emission from nanostructural ZnO can be engineered by morphological and electronic design. By fabricating ZnO into pin structure with sharp tip, low threshold and high emission current density were obtained. By doping ZnO, the Fermi level was lifted up to increase the conductivity and reduce the emission barrier. We explored both dry and wet method for ZnO field emitter fabrication. ZnO field emitters are oxidation resistant, which allows a less stringent processing process (annealing in oxygen ambient) and low vacuum operation.