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41.4: AMOLED based on Silicon‐On‐Glass (SiOG) Technology
Author(s) -
Choi Jae Beom,
Chang YoungJin,
Shim SeungHwan,
Chung InDo,
Park Keun Woo,
Park Kee Chan,
Moon Kook Chul,
Min HoonKee,
Kim ChiWoo,
Gadkaree Kishor P.,
Couillard James G.,
Cites Jeffrey S.,
Ahn Sung Eun
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785570
Subject(s) - amoled , materials science , thin film transistor , gamut , backplane , silicon , optoelectronics , transistor , nanotechnology , electrical engineering , active matrix , computer science , engineering , layer (electronics) , artificial intelligence , voltage
We have demonstrated that the single crystalline silicon films on the glass substrates can be utilized in the conventional mass production lines. The single crystalline Si layers were transferred to the 370 mm × 470 mm glass substrates using Silicon‐On‐Glass (SiOG) technology. Using the thin film transistor backplanes made by conventional CMOS technology, 2.4″ qVGA AMOLED with integrated circuits were successfully fabricated. A completed 2.4″ qVGA AMOLED module shows wide viewing angle (> 170°) and 73% color gamut. The advantages of SiOG technology and its significances will be presented.