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P‐167: High‐Color‐Temperature p‐i‐n White Organic Light‐Emitting Devices Based on the Fluorescent RGB System
Author(s) -
Chen ChaoJung,
Hwang ShiaoWen,
Chen Chin H.
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785434
Subject(s) - fluorescence , rgb color model , dopant , doping , chemistry , optoelectronics , layer (electronics) , materials science , oled , chromaticity , analytical chemistry (journal) , optics , physics , nanotechnology , chromatography , computer science , operating system
P‐i‐n devices with 5% Cs doped BPhen as the n‐type transporting layer and WO 3 doped NPB as the p‐type transporting layer are investigated for controlling the recombination zone (RZ) of carriers in WOLED based on three adjacent fluorescent red, green and blue emitters. Variation in white CIE x,y color coordinates are closely related to the proportion of deep blue emission which serves as an indicator for the position of the RZ. By optimizing the concentration of the deep blue dopant, it is possible to enhance the color temperature of WOLED and boost the efficiency to 8 cd/A at 5.5 V (20 mA/cm2) with CIE x,y of (0.33, 0.34) which is among the best reported for the fluorescent RGB 3‐emission WOLEDs.