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P‐113: Ferroelectric LC Aligned on SiO 2 Thin Films Using the Ion Beam Deposition and its Applications
Author(s) -
Li Xihua,
Murauski Anatoli,
Chigrinov Vladimir,
Khokhlov A.,
Khokhlov E.
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785380
Subject(s) - materials science , deposition (geology) , ion beam , thin film , ferroelectricity , optoelectronics , beam (structure) , layer (electronics) , sputtering , optics , ion , nanotechnology , dielectric , chemistry , paleontology , physics , organic chemistry , sediment , biology
The uniform alignment of Ferroelectric LCs (FLC) on inorganic thin film surfaces can be obtained using oblique ion beam sputtering deposition on substrates. Large deposition angle from 60° to 80 ° can be used for thin SiO 2 alignment layer, which thickness can vary from 5nm to 40 nm. Two types of uniform alignment of “chevron” (before electrical treatment) and “quazi‐bookshelf” (after electrical treatment) were studied. The applications using this unique technology in low power consumption displays, fast switching color displays, future LCD‐TVs and fiber optics are discussed. High quality alignment on large size substrates is also easily achieved because of the linear design of the ion beam sputtering source, which is a big challenge for FLC on SiO x layers before.