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P‐210: Ta‐Doped SnO 2 Thin Films for PDP
Author(s) -
Mihara Yu,
Satoh Ryohei,
Usui Reo,
Morinaga Eiji,
Iwata Yoshiharu
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785317
Subject(s) - plasma display , materials science , doping , flat panel display , indium tin oxide , electrode , indium , optoelectronics , tin , sputtering , thin film , nanotechnology , metallurgy , chemistry
SnO 2 is considered to be a promising alternative material for indium tin oxide (ITO), which is used for transparent electrode in Flat Panel Display (FPD) and is facing a serious indium depletion problem. However, there are some problems such as high resistance, difficulty in processing, and low sintered density, which is necessary to sputtering. We investigated Ta‐X doped SnO 2 . Doping these elements enabled sintered density to rise and its specific resistance to decrease below 1.0×10 −2 Ω⋅cm after dielectric firing, it is low enough to apply to plasma display panel (PDP). Furthermore, the films which we formed were easy to process by YAG laser. Therefore, it is favorable material for transparent electrode of PDP.