Premium
P‐199L: Late‐News Poster : Silicon Nanocrystals Photo Sensor Integrated on Low‐Temperature Polycrystalline‐Silicon Panels
Author(s) -
Chiang WenJen,
Chen ChihYang,
Lin ChrongJung,
King YaChin,
Cho AnThung,
Peng ChiaTien,
Chao ChihWei,
Lin KunChih,
Gan FengYuan
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785288
Subject(s) - materials science , optoelectronics , silicon , nanocrystal , quantum dot , polycrystalline silicon , annealing (glass) , diode , nanotechnology , layer (electronics) , composite material , thin film transistor
A photo‐detector using silicon nanocrystal layer sandwiched between two electrodes is first time proposed and demonstrated for photo‐sensing application on LTPS panels. Through post‐annealing of silicon rich oxide films, Si nanocrystals can be formed with good uniformity and high temperature tolerance to respond best to certain absorption spectrum of the corresponding light source. These silicon nanocrystals, less than 10nm in diameter, exhibit better quantum confinement effect, which promote electron‐hole pair generation in photo‐sensing region as a result of its direct bandgap. In addition to obtaining photo sensitivity superior to that of a P‐I‐N diode currently used in LTPS technology, the new sensor can maximize the fill factor in a pixel circuit by adapting a stacked structure.