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P‐196L: Late‐News Poster : High‐Performance Zinc Oxide Transistors by an Ambient Process
Author(s) -
Levy David,
CowderyCorvan Peter,
Freeman Diane,
Nelson Shelby,
Childs Andrea
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785285
Subject(s) - materials science , dielectric , optoelectronics , transistor , thin film transistor , semiconductor , gate dielectric , substrate (aquarium) , zinc , leakage (economics) , gate oxide , oxide , electrical engineering , nanotechnology , layer (electronics) , metallurgy , voltage , engineering , oceanography , geology , economics , macroeconomics
An ambient process was developed for producing both the dielectric and semiconductor layers of a zinc oxide‐based thin‐film transistor. The dielectric films exhibited good electrical properties, leading to devices with gate leakage less than 25 nA/cm 2 . Typical devices had mobilities in excess of 5 cm 2 /Vs from a process with a maximum substrate temperature of 200°C. In addition, devices showed reasonable electrical stability in this novel deposition process for dielectrics and semiconductors.