P‐194L: Late‐News Poster: High‐Frequency Performance of Sub‐Micrometer Channel‐Length Si TFTs Fabricated on Large Grain Poly‐Si Films | Zendy

Kawachi Genshiro | Zendy; Mitani Masahiro | Zendy; Okada Takashi | Zendy; Tsuboi Shinzo | Zendy

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P‐194L: Late‐News Poster: High‐Frequency Performance of Sub‐Micrometer Channel‐Length Si TFTs Fabricated on Large Grain Poly‐Si Films

Author(s) -

Kawachi Genshiro,

Mitani Masahiro,

Okada Takashi,

Tsuboi Shinzo

Publication year - 2007

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2785283

Subject(s) - materials science , cutoff frequency , optoelectronics , substrate (aquarium) , thin film transistor , susceptance , grain size , oscillation (cell signaling) , electrical engineering , nanotechnology , composite material , voltage , oceanography , engineering , layer (electronics) , geology , biology , genetics

High‐frequency characteristics of sub‐micron Si TFTs fabricated on large‐grain poly‐Si films are demonstrated for the first time. A cutoff frequency ( fT ) of 6 GHz and a maximum oscillation frequency (f max ) of 25 GHz were obtained for the TFT with a channel length of 0.5 μm. It was confirmed that use of insulating substrates is advantageous to reduce the parasitic susceptance due to a conductive substrate, thereby increasing f max .

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