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P‐28: Flexibility Study of High‐Performance LTPS‐TFT on Flexible Metal Foil
Author(s) -
Cheon Jun Hyuk,
Bae Jung Ho,
Jang Jin
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785282
Subject(s) - foil method , thin film transistor , materials science , voltage , flexibility (engineering) , optoelectronics , swing , threshold voltage , metal , channel (broadcasting) , electrical engineering , composite material , transistor , metallurgy , mechanical engineering , engineering , layer (electronics) , mathematics , statistics
Abstract We have studied the flexibility of the p‐channel LTPS‐TFT on 150‐μm‐thick flexible metal foil. The p‐channel, non‐laser poly‐Si TFT on the metal foil exhibited the field‐effect mobility of 107.5 cm 2 /Vs, the threshold voltage of −6.7 V, the gate voltage swing of 0.9 V/dec., and the minimum off current of 10 −12 A/μm at V ds =−0.1 V. The TFT performance is stable until 10,000 bendings with the strain of 0.6%.