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P‐18: Improvement of Stability in ZnO TFT Under Bias Stress
Author(s) -
Hwang ChiSun,
Park SangHee Ko,
Lee JeongIk,
Chung Sung Mook,
Yang Yong Suk,
Do LeeMi,
Chu Hye Yong
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785273
Subject(s) - atomic layer deposition , thin film transistor , materials science , layer (electronics) , optoelectronics , stress (linguistics) , deposition (geology) , stability (learning theory) , plasma , nanotechnology , computer science , physics , paleontology , linguistics , philosophy , quantum mechanics , machine learning , sediment , biology
The stability of ZnO TFT under bias stress was investigated. Transparent ZnO thin films deposited by means of atomic layer deposition(ALD) and plasma enhanced atomic layer deposition(PEALD) at 100 °C were used as the active channel. The TFT with PEALD grown ZnO layer has better stability under bias stress than the TFT with ALD grown ZnO layer.