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P‐16: Solution‐Processed Zinc Oxide Thin‐Film Transistors
Author(s) -
Levy David,
Irving Lyn,
Childs Andrea
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785271
Subject(s) - thin film transistor , zinc , materials science , transistor , nanoparticle , oxide , thin film , optoelectronics , nanotechnology , electrical engineering , metallurgy , layer (electronics) , engineering , voltage
Abstract Methods for producing zinc oxide thin‐film transistors by solution processing were studied. One class of methods involves the use of zinc‐acetate‐based precursor solutions, while the other involves the use of preformed nanoparticles. Devices with reasonable transfer characteristics were obtained from both routes, exhibiting mobilities typically greater than 0.1 cm 2 /Vs.