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P‐14: a‐Si Robust Gate Driver for 7.0‐in. WVGA LCD Panel
Author(s) -
Chen HungChun,
Chiang KoYu,
Chen MingDaw,
Kung ChenPang,
Hou WeiHsin
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785269
Subject(s) - thin film transistor , liquid crystal display , gate driver , materials science , reliability (semiconductor) , transistor , substrate (aquarium) , optoelectronics , amorphous silicon , flat panel display , threshold voltage , electrical engineering , voltage , silicon , electronic engineering , engineering , nanotechnology , crystalline silicon , physics , power (physics) , oceanography , layer (electronics) , quantum mechanics , geology
Abstract We proposed an Hydrogenated amorphous silicon thin film transistors (a‐Si:H TFT) robust gate driver on glass substrate for the 7‐inch WVGA TFT‐LCD panel. By utilizing the specific design technique, the threshold voltage (V th ) shift of the a‐Si TFT in the gate driver can be compensated. Under reliability simulations, the gate driver can operates correctly over 8 days in 80 °C, although the V th increased to ten times of the initial value. The integrated a‐Si TFT gate driver can effectively reduce the cost of TFT‐LCD manufacturing in the future.