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P‐12: Enhanced Pentacene OTFTs with Suspended Source/Drain Electrode
Author(s) -
Kim YongHoon,
Lee Yong Uk,
Han JeongIn,
Han SangMyeon,
Lee Woocheul,
Han MinKoo,
Park YoungHwan,
Oh MyungHwan,
Kang Jungwon
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785267
Subject(s) - pentacene , subthreshold slope , materials science , electrode , thin film transistor , threshold voltage , optoelectronics , subthreshold conduction , layer (electronics) , etching (microfabrication) , transistor , active layer , nanotechnology , voltage , electrical engineering , chemistry , engineering
We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin‐film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field‐effect mobility, on/off ratio, threshold voltage (V TH ) and subthreshold slope compared to conventional bottom‐contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top‐contact‐like geometry. The field‐effect mobility of ink‐jet printed TIPS pentacene OTFT increased from 0.007 cm 2 /Vs to 0.066 cm 2 /Vs, on/off ratio increased from 10 4 to 10 6 , V TH decreased from +9 V to −3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.
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