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P‐6: Top‐Gate and Bottom‐Gate Amorphous ZnO Transparent TFTs Fabricated by All‐Etching Processes
Author(s) -
Hsieh HsingHung,
Wu ChungChih
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785261
Subject(s) - materials science , etching (microfabrication) , amorphous solid , optoelectronics , layer (electronics) , nanotechnology , crystallography , chemistry
Both top‐gate and bottom‐gate amorphous ZnO TTFTs were effectively fabricated by thinning the ZnO layer and by using all‐etching processes. Rather high field‐effect mobilities of 25 cm 2 /Vs and 4 cm 2 /Vs and on/off current ratios of >10 7 and >10 6 were achieved for top‐gate and bottom‐gate configurations, respectively.