Premium
P‐6: Top‐Gate and Bottom‐Gate Amorphous ZnO Transparent TFTs Fabricated by All‐Etching Processes
Author(s) -
Hsieh HsingHung,
Wu ChungChih
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785261
Subject(s) - materials science , etching (microfabrication) , amorphous solid , optoelectronics , layer (electronics) , nanotechnology , crystallography , chemistry
Both top‐gate and bottom‐gate amorphous ZnO TTFTs were effectively fabricated by thinning the ZnO layer and by using all‐etching processes. Rather high field‐effect mobilities of 25 cm 2 /Vs and 4 cm 2 /Vs and on/off current ratios of >10 7 and >10 6 were achieved for top‐gate and bottom‐gate configurations, respectively.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom