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13.2: Highly Stable a‐Si:H TFT Pixel for Large Area AMOLED by Employing Both V th Storing and the Negative Bias Annealing
Author(s) -
Lee JaeHoon,
Park HyunSang,
Choi SungHwan,
Lee WonKyu,
Han MinKoo,
Goh Joonchul,
Choi Joonhoo,
Chung Kyuha
Publication year - 2007
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2785254
Subject(s) - amoled , thin film transistor , pixel , oled , materials science , annealing (glass) , backplane , optoelectronics , threshold voltage , voltage , transistor , electrical engineering , optics , nanotechnology , physics , active matrix , composite material , engineering , layer (electronics)
Abstract Highly stable voltage programmed a‐Si:H TFT pixel circuit for AMOLED, which employs both V th ‐compensation and negative bias annealing, is proposed and fabricated. Experimental results, after 60 hours electrical stress at elevated temperature (60°C) show that the OLED current stability in the proposed pixel is considerably improved compared with a conventional 2‐TFT pixel, V th ‐compensated pixel, and negative bias annealed pixel, respectively. The proposed pixel can reduce the degradation of a‐Si:H TFT by employing negative bias annealing store V th of a‐Si:H TFT so that highly stable and uniform a‐Si:H TFT backplane for AMOLED. Our proposed pixel may be suitable for highly stable AMOLED employing the a‐Si:H TFT.