13.2: Highly Stable a‐Si:H TFT Pixel for Large Area AMOLED by Employing Both V th  Storing and the Negative Bias Annealing | Zendy

Lee JaeHoon | Zendy; Park HyunSang | Zendy; Choi SungHwan | Zendy; Lee WonKyu | Zendy; Han MinKoo | Zendy; Goh Joonchul | Zendy; Choi Joonhoo | Zendy; Chung Kyuha | Zendy

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13.2: Highly Stable a‐Si:H TFT Pixel for Large Area AMOLED by Employing Both V th Storing and the Negative Bias Annealing

Author(s) -

Lee JaeHoon,

Park HyunSang,

Choi SungHwan,

Lee WonKyu,

Han MinKoo,

Goh Joonchul,

Choi Joonhoo,

Chung Kyuha

Publication year - 2007

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1889/1.2785254

Subject(s) - amoled , thin film transistor , pixel , oled , materials science , annealing (glass) , backplane , optoelectronics , threshold voltage , voltage , transistor , electrical engineering , optics , nanotechnology , physics , active matrix , composite material , engineering , layer (electronics)

Highly stable voltage programmed a‐Si:H TFT pixel circuit for AMOLED, which employs both V th ‐compensation and negative bias annealing, is proposed and fabricated. Experimental results, after 60 hours electrical stress at elevated temperature (60°C) show that the OLED current stability in the proposed pixel is considerably improved compared with a conventional 2‐TFT pixel, V th ‐compensated pixel, and negative bias annealed pixel, respectively. The proposed pixel can reduce the degradation of a‐Si:H TFT by employing negative bias annealing store V th of a‐Si:H TFT so that highly stable and uniform a‐Si:H TFT backplane for AMOLED. Our proposed pixel may be suitable for highly stable AMOLED employing the a‐Si:H TFT.

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