13.2: Highly Stable a‐Si:H TFT Pixel for Large Area AMOLED by Employing Both V th Storing and the Negative Bias Annealing

Highly stable voltage programmed a‐Si:H TFT pixel circuit for AMOLED, which employs both V th ‐compensation and negative bias annealing, is proposed and fabricated. Experimental results, after 60 hours electrical stress at elevated temperature (60°C) show that the OLED current stability in the proposed pixel is considerably improved compared with a conventional 2‐TFT pixel, V th ‐compensated pixel, and negative bias annealed pixel, respectively. The proposed pixel can reduce the degradation of a‐Si:H TFT by employing negative bias annealing store V th of a‐Si:H TFT so that highly stable and uniform a‐Si:H TFT backplane for AMOLED. Our proposed pixel may be suitable for highly stable AMOLED employing the a‐Si:H TFT.