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Carbon nanotubes and semiconductor nanowires for active‐matrix backplanes
Author(s) -
Pribat D.,
Cojocaru C. S.,
Gowtham M.,
Eude L.,
Bondavalli P.,
Legagneux P.
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2770861
Subject(s) - materials science , nanotechnology , nanowire , carbon nanotube , transistor , semiconductor , fabrication , active matrix , context (archaeology) , thin film transistor , electronics , nanomaterials , nanoelectronics , optoelectronics , layer (electronics) , electrical engineering , voltage , medicine , paleontology , alternative medicine , engineering , pathology , biology
— Carbon nanotubes and semiconductor nanowires are a new class of materials currently being studied within the context of molecular electronics. Because of their excellent characteristics, transistors based on carbon nanotubes and semiconductor nanowires could become the workhorse of the post‐CMOS era. Since carbon nanotubes as well as Si or Ge nanowires can be grown at low temperature, using similar CVD‐type processes and on non‐crystalline and non‐refractory substrates, they could (and will) certainly be used in the near future for the fabrication of thin‐film transistors and active‐matrix backplanes. However, the development of these nanomaterials is hampered by the general problems posed by their manipulation, placement, and in‐plane organization. The possible use of CNT random networks (that do not need to be organised) for the fabrication of thin‐film transistors will be reviewed. Then a new way of organizing semiconductor NWs in a thin‐film transistor, based on the use of lateral porous anodic alumina templates, will be presented.