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100‐MHz CMOS circuits directly fabricated on plastic using sequential laterally solidified silicon
Author(s) -
Kane Michael G.,
Goodman Lawrence,
Firester Arthur H.,
Wilt Paul C.,
Limanov Alexander B.,
Im James S.
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2759552
Subject(s) - nmos logic , cmos , materials science , electronic circuit , optoelectronics , fabrication , silicon , electrical engineering , transistor , engineering , medicine , alternative medicine , pathology , voltage
Abstract— CMOS TFT circuits were fabricated on plastic using sequential laterally solidified silicon combined with a low‐temperature CMOS process. The unity‐gain frequencies of the best of NMOS TFTs are greater than 250 MHz, and the CMOS ring oscillators operate at 100 MHz. To the best of the authors' knowledge, these are the highest‐frequency circuits ever fabricated directly on plastic. This high‐performance CMOS‐on‐plastic process can be applied to the fabrication of AMLCD integrated drivers and AMOLED pixels on plastic substrates.