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Effects of post‐annealing on a‐Si:H TFT characteristics fabricated on stainless‐steel substrate
Author(s) -
Han ChangWook,
Kim ChangDong,
Chung InJae
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2759548
Subject(s) - materials science , thin film transistor , annealing (glass) , optoelectronics , backplane , substrate (aquarium) , field effect , threshold voltage , amorphous solid , composite material , amorphous silicon , silicon , transistor , voltage , electrical engineering , crystallography , oceanography , chemistry , layer (electronics) , crystalline silicon , geology , engineering
— A 14.1‐in.‐diagonal backplane employing hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) was fabricated on a flexible stainless‐steel substrate. The TFTs exhibited a field‐effect mobility of 0.54 cm 2 /V‐sec, a threshold voltage of 1.0 V, and an off‐current of 10 −13 A. Most of the electrical characteristics were comparable to those of the TFTs fabricated on glass substrates. To increase the stability of a‐Si:H TFTs fabricated on stainless‐steel substrate, the specimens were thermally annealed at 230°C. The field‐effect mobility was reduced to 71% of the initial value because of the strain of the released hydrogen atoms and residual compressive stress in a‐Si:H TFT under thermal annealing at 230°C.
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