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Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil
Author(s) -
Kattamis Alex Z.,
Giebink Noel,
Cheng IChun,
Wagner Sigurd,
Forrest Stephen R.,
Hong Yongtaek,
Cannella Vincent
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2759547
Subject(s) - amoled , materials science , thin film transistor , oled , optoelectronics , active matrix , foil method , electronic circuit , transistor , pixel , voltage , optics , electrical engineering , nanotechnology , composite material , physics , engineering , layer (electronics)
— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m 2 .