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Highly conductive SnO 2 thin films for flat‐panel displays
Author(s) -
Isono Takamitsu,
Fukuda Takeshi,
Nakagawa Kouji,
Usui Reo,
Satoh Ryohei,
Morinaga Eiji,
Mihara Yu
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2709738
Subject(s) - electrical resistivity and conductivity , annealing (glass) , materials science , indium tin oxide , thin film , electrical conductor , tin , indium , transparent conducting film , optoelectronics , electrode , flat panel display , flat panel , composite material , nanotechnology , metallurgy , optics , electrical engineering , chemistry , physics , engineering
— SnO 2 is considered to be a promising alternative material for indium tin oxide (ITO), which is used for thin‐film transparent electrodes in flat‐panel displays (FPDs) and is facing a serious indium depletion problem. However, annealing processes in the manufacture of plasma‐display panels (PDPs), which are major FPDs, cause high resistivity in SnO 2 films. To obtain lower resistivity after the annealing processes, the relationship between deposition conditions and resistivity and the influences of annealing on resistivity, both theoretically and experimentally, were investigated. As a solution, a method involving the formation of a coating of SiO 2 on SnO 2 is proposed, and a SnO 2 resistivity as low as 6.60 × 10 −5 Ω‐m was obtained after annealing.
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