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PECVD‐based nanocrystalline‐silicon TFT backplanes for large‐sized AMOLED displays
Author(s) -
Girotra Kunal S.,
Choi YongMo,
Kim ByoungJune,
Song YoungRok,
Choi Beomrak,
Yang SungHoon,
Kim Shiyul,
Lim Soonkwon
Publication year - 2007
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/1.2709730
Subject(s) - amoled , thin film transistor , materials science , backplane , plasma enhanced chemical vapor deposition , optoelectronics , silicon , oled , threshold voltage , active matrix , transistor , voltage , nanotechnology , electrical engineering , computer science , computer hardware , layer (electronics) , engineering
— A 14.1‐in. AMOLED display using nanocrystalline silicon (nc‐Si) TFTs has been developed. Nanocrystalline silicon was deposited using conventional 13.56‐MHz plasma‐enhanced chemical vapor deposition (PECVD). Detailed thin‐film characterization of nc‐Si films was followed by development of nc‐Si TFTs, which demonstrate a field‐effect mobility of about 0.6–1.0 cm 2 /V‐sec. The nc‐Si TFTs show no significant shift in threshold voltage when over 700 hours of constant current stress is applied, indicating a stable TFT backplane. The nc‐Si TFTs were successfully integrated into a 14.1‐in. AMOLED display. The display shows no significant current decrease in the driving TFT of the 2T‐1cap circuit because the TFTs are highly stable. In addition to the improved lifetime of AMOLED displays, the development of nc‐Si TFTs using a conventional 13.56‐MHz PECVD system offers considerable cost advantages over other laser and non‐laser polysilicon‐TFT technologies for large‐sized AMOLEDs.