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P‐199: Analysis of the Deterioration Mechanism of Phosphorescent OLED
Author(s) -
Kamoto Ritsu,
Araki Keiichi,
Ichikawa Musubu,
Taniguchi Yoshio
Publication year - 2006
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.2433687
Subject(s) - oled , phosphorescence , materials science , raman spectroscopy , infrared , optoelectronics , annealing (glass) , degradation (telecommunications) , layer (electronics) , nanotechnology , computer science , optics , composite material , telecommunications , physics , fluorescence
Operation durability is the most important issue in Organic Light‐Emitting Devices(OLEDs). Micro analysis methods such as infrared microspectroscopy Raman microspectroscopy and micro sampling mass spectrometry(μ‐MS), can provide deep insights of the degradation mechanism information of OLEDs that is composed of ultra thin organic multilayer. In this paper, we have tried to investigate the degradation mechanism through electric current operation of phosphorescent OLEDs, whose device structure, IZO/NPD/FIrpic: CBP/BCP/Alq/Mg/Ag, is investigated precisely. μ‐MS have detected the individual change of physical characteristics of the each organic layer. and these results are compared with the effects of heat anneling treatment of OLEDs. It is obtained the similar physical characteristic change in heat annealing treatment, but not the same.